IRF6612
Part NoIRF6612
ManufacturerInternational Rectifier
DescriptionPower Field-Effect Transistor, 24A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MX, ISOMETRIC-3
Datasheet
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ECAD Module
Specification
RoHSNon-Compliant
MountSurface Mount
Lead FreeLead Free
PackagingCut Tape
Rise Time52 ns
REACH SVHCUnknown
Rds On Max3.3 mΩ
Nominal Vgs2.25 V
Current Rating24 A
Number of Pins5
Input Capacitance3.97 nF
Power Dissipation89 W
Turn-Off Delay Time21 ns
Voltage Rating (DC)30 V
Max Power Dissipation2.8 W
Max Operating Temperature150 °C
Min Operating Temperature-40 °C
Drain to Source Resistance2.5 Ω
Gate to Source Voltage (Vgs)20 V
Continuous Drain Current (ID)24 A
Drain to Source Voltage (Vdss)30 V
Drain to Source Breakdown Voltage30 V
In Stock:
9161
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