IRFAF40
Part NoIRFAF40
ManufacturerInternational Rectifier
DescriptionN-CHANNEL HERMETIC MOS HEXFET
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesHEXFET®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)900 V
Current-ContinuousDrain(Id)@25°C4.3A (Tc)
DriveVoltage(MaxRdsOn2.9Ohm @ 4.3A, 10V
MinRdsOn)4V @ 250µA
RdsOn(Max)@Id120 nC @ 10 V
Vgs±20V
Vgs(th)(Max)@Id1500 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds125W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Through Hole
OperatingTemperatureTO-204AA (TO-3)
MountingTypeTO-204AA, TO-3
SupplierDevicePackage10V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2835
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.2983 | |
| 10 | 5.1923 | |
| 100 | 5.0334 | |
| 1000 | 4.8744 | |
| 10000 | 4.6625 |
Associated Product
