IV1Q12050T3
Part NoIV1Q12050T3
ManufacturerInventChip
DescriptionSIC MOSFET, 1200V 50MOHM, TO-247
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C58A (Tc)
DriveVoltage(MaxRdsOn20V
MinRdsOn)65mOhm @ 20A, 20V
RdsOn(Max)@Id3.2V @ 6mA
Vgs120 nC @ 20 V
Vgs(th)(Max)@Id+20V, -5V
Vgs(Max)2770 pF @ 800 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature327W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247-3
SupplierDevicePackageTO-247-3
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
3163
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 29.9298 | |
| 10 | 29.3312 | |
| 100 | 28.4333 | |
| 1000 | 27.5354 | |
| 10000 | 26.3382 |
Associated Product
