IV1Q12160T4
Part NoIV1Q12160T4
ManufacturerInventChip
DescriptionSIC MOSFET, 1200V 160MOHM, TO-24
Datasheet
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ECAD Module
Specification
PackageTube
Series-
ProductStatusActive
FETTypeSiCFET (Silicon Carbide)
Technology-
DraintoSourceVoltage(Vdss)N-Channel
Current-ContinuousDrain(Id)@25°C1200 V
DriveVoltage(MaxRdsOn20A (Tc)
MinRdsOn)20V
RdsOn(Max)@Id195mOhm @ 10A, 20V
Vgs2.9V @ 1.9mA
Vgs(th)(Max)@Id43 nC @ 20 V
Vgs(Max)+20V, -5V
InputCapacitance(Ciss)(Max)@Vds885 pF @ 800 V
FETFeature138W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperature-
MountingType-
SupplierDevicePackageThrough Hole
Package/CaseTO-247-4
GateCharge(Qg)(Max)@VgsTO-247-4
Grade
Qualification
In Stock:
4742
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 19.2921 | |
| 10 | 18.9063 | |
| 100 | 18.3275 | |
| 1000 | 17.7487 | |
| 10000 | 16.977 |
Associated Product
