IRF640N
RoHS

IRF640N

Part NoIRF640N
ManufacturerJSMSEMI
Description-
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ECAD Module IRF640N
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Specification
Drain Source Voltage (Vdss)200V
Continuous Drain Current (Id)18A
Drain Source On Resistance (RDS(on)@Vgs,Id)150mu03a9@10V,11A
Power Dissipation (Pd)150W
Gate Threshold Voltage (Vgs(th)@Id)4V@250uA
Reverse Transfer Capacitance (Crss@Vds)-
TypeNu6c9fu9053
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)-
Operating Temperature+175u2103@(Tj)
In Stock: 20835
Pricing
QTY UNIT PRICE EXT PRICE
1 0.0692
10 0.0678
100 0.0658
1000 0.0637
10000 0.0609
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product