Specification
Collector-Emitter Breakdown Voltage (Vceo)30V
Power Dissipation (Pd)350mW
Collector Current (Ic)20mA
DC Current Gain (hFE@Ic,Vce)54@1mA,5V
Transition Frequency (fT)800MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)-
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)
In Stock:
5114
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.025 | |
10 | 0.024 | |
100 | 0.02 | |
1000 | 0.02 | |
10000 | 0.02 |