LND150N3
Part NoLND150N3
ManufacturerLAPIS Semiconductor
Description-
Datasheet
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ECAD Module
Specification
Case/PackageTO-92-3
Continuous Drain Current (ID)30 mA
Drain to Source Breakdown Voltage500 V
Drain to Source Resistance1 kΩ
Drain to Source Voltage (Vdss)500 V
Element ConfigurationSingle
Fall Time450 ns
Gate to Source Voltage (Vgs)20 V
Height5.33 mm
Length5.21 mm
Max Operating Temperature150 °C
Max Power Dissipation740 mW
Min Operating Temperature-55 °C
Number of Channels1
PackagingBulk
Power Dissipation740 mW
Rise Time450 ns
RoHSNon-Compliant
Turn-Off Delay Time100 ns
Turn-On Delay Time90 ns
Weight219.992299 mg
Width4.19 mm
In Stock:
8478
Pricing
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Associated Product
