SCT2H12NZGC11
Part NoSCT2H12NZGC11
ManufacturerLAPIS Semiconductor
DescriptionMOSFET N-CH 1700V 3.7A
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id4V @ 900µA
Vgs (Max)+22V, -6V
TechnologySiCFET (Silicon Carbide)
Supplier Device PackageTO-3PFM
Series-
Rds On (Max) @ Id, Vgs1.5 Ohm @ 1.1A, 18V
Power Dissipation (Max)35W (Tc)
PackagingTube
Package / CaseTO-3PFM, SC-93-3
Operating Temperature175°C (TJ)
Mounting TypeThrough Hole
Moisture Sensitivity Level (MSL)1 (Unlimited)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds184pF @ 800V
Gate Charge (Qg) (Max) @ Vgs14nC @ 18V
FET TypeN-Channel
FET Feature-
Drive Voltage (Max Rds On, Min Rds On)18V
Drain to Source Voltage (Vdss)1700V
Detailed DescriptionN-Channel 1700V 3.7A (Tc) 35W (Tc) Through Hole TO-3PFM
Current - Continuous Drain (Id) @ 25°C3.7A (Tc)
In Stock:
18754
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 5.768 | |
| 10 | 5.6526 | |
| 100 | 5.4796 | |
| 1000 | 5.3066 | |
| 10000 | 5.0758 |
Associated Product
