US6J11TR
Part NoUS6J11TR
ManufacturerLAPIS Semiconductor
DescriptionMOSFET 2P-CH 12V 1.3A TUMT6
Datasheet
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ECAD Module
Specification
Vgs(th) (Max) @ Id1V @ 1mA
Supplier Device PackageUMT6
Series-
Rds On (Max) @ Id, Vgs260 mOhm @ 1.3A, 4.5V
Power - Max320mW
PackagingTape & Reel (TR)
Package / Case6-TSSOP, SC-88, SOT-363
Operating Temperature150°C (TJ)
Mounting TypeSurface Mount
Moisture Sensitivity Level (MSL)1 (Unlimited)
Manufacturer Standard Lead Time10 Weeks
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Input Capacitance (Ciss) (Max) @ Vds290pF @ 6V
Gate Charge (Qg) (Max) @ Vgs2.4nC @ 4.5V
FET Type2 P-Channel (Dual)
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)12V
Detailed DescriptionMosfet Array 2 P-Channel (Dual) 12V 1.3A 320mW Surface Mount UMT6
Current - Continuous Drain (Id) @ 25°C1.3A
Base Part Number*J11
In Stock:
16369
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.6144 | |
| 10 | 0.6021 | |
| 100 | 0.5837 | |
| 1000 | 0.5652 | |
| 10000 | 0.5407 |
Associated Product
