LSI1013LT1G
RoHS

LSI1013LT1G

Part NoLSI1013LT1G
ManufacturerLeshan Radio Co.
Description-
Datasheet Download Now!
ECAD Module LSI1013LT1G
Get Quotation Now!
Specification
Drain Source Voltage (Vdss)-
Continuous Drain Current (Id)-
Drain Source On Resistance (RDS(on)@Vgs,Id)-
Power Dissipation (Pd)-
Gate Threshold Voltage (Vgs(th)@Id)-
Reverse Transfer Capacitance (Crss@Vds)-
Type-
Input Capacitance (Ciss@Vds)-
Total Gate Charge (Qg@Vgs)-
In Stock: 9944
Pricing
QTY UNIT PRICE EXT PRICE
1 0.0105
10 0.0103
100 0.01
1000 0.0096
10000 0.0092
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product
PMV100EPAR
PMV100EPAR
Nexperia
MOSFET P-CH 60V 2.2A TO236AB
STL7LN80K5
STL7LN80K5
STMicroelectronics
MOSFET N-CH 800V 5A POWERFLAT
G3R20MT17K
G3R20MT17K
GeneSiC Semiconductor
SIC MOSFET N-CH 124A TO247-4
RF1S70N03
RF1S70N03
Harris
MOSFET N-CH 30V 70A TO262AA
NVMFS5C645NLWFAFT1G
NVMFS5C645NLWFAFT1G
onsemi
MOSFET N-CH 60V 22A 5DFN
PTFA210601EV4XWSA1
PTFA210601EV4XWSA1
Infineon
RF MOSFET LDMOS 28V H-36265-2
STL8N65M5
STL8N65M5
STMicroelectronics
MOSFET N-CH 650V 7A POWERFLAT