DS1250AB-100+
Part NoDS1250AB-100+
ManufacturerAnalog Devices
DescriptionIC NVSRAM 4M PARALLEL 32EDIP
Datasheet
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Specification
HTS Code8473.30.11.40
ECCN Code3A991.B.2.A
PackagingTube
Pin Count32
Published2004
TechnologyNVSRAM (Non-Volatile SRAM)
Memory Size4Mb 512K x 8
Memory TypeNon-Volatile
Part StatusActive
Pbfree Codeyes
RoHS StatusROHS3 Compliant
SubcategorySRAMs
JESD-30 CodeR-XDMA-P32
Memory Width8
Organization512KX8
JESD-609 Codee3
Memory FormatNVSRAM
Mounting TypeThrough Hole
Surface MountNO
Memory Density4194304 bit
Operating ModeASYNCHRONOUS
Package / Case32-DIP Module (0.600, 15.24mm)
Power Supplies5V
Supply Voltage5V
Terminal Pitch2.54mm
Terminal FinishMATTE TIN
Base Part NumberDS1250AB
Memory InterfaceParallel
Voltage - Supply4.75V~5.25V
Access Time (Max)100 ns
Factory Lead Time9 Weeks
Terminal PositionDUAL
Additional Feature10 YEAR DATA RETENTION
Supply Current-Max0.085mA
Number of Functions1
Standby Current-Max0.0006A
Qualification StatusNot Qualified
Operating Temperature0°C~70°C TA
Reach Compliance Codenot_compliant
Number of Terminations32
Supply Voltage-Max (Vsup)5.25V
Supply Voltage-Min (Vsup)4.75V
Peak Reflow Temperature (Cel)NOT SPECIFIED
Write Cycle Time - Word, Page100ns
Moisture Sensitivity Level (MSL)1 (Unlimited)
Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
In Stock:
5057
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 83.59 | |
10 | 81.9182 | |
100 | 79.4105 | |
1000 | 76.9028 | |
10000 | 73.5592 |