2N6351E3
Part No2N6351E3
ManufacturerMicrochip
DescriptionPOWER BJT
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TransistorTypeNPN - Darlington
Current-Collector(Ic)(Max)5 A
Voltage-CollectorEmitterBreakdown(Max)150 V
VceSaturation(Max)@Ib2.5V @ 10mA, 5A
Ic1µA
Current-CollectorCutoff(Max)1000 @ 5A, 5V
DCCurrentGain(hFE)(Min)@Ic1 W
Vce-
Power-Max-65°C ~ 200°C
Frequency-TransitionThrough Hole
OperatingTemperatureTO-205AC, TO-33-4 Metal Can
MountingTypeTO-33
Package/Case-
SupplierDevicePackage-
Grade
Qualification
In Stock:
8925
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 22.1646 | |
| 10 | 21.7213 | |
| 100 | 21.0564 | |
| 1000 | 20.3914 | |
| 10000 | 19.5048 |
Associated Product
