2N6583
RoHS

2N6583

Part No2N6583
ManufacturerMicrochip
DescriptionPOWER BJT
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ECAD Module 2N6583
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Specification
PackageBulk
Series-
ProductStatusActive
TransistorTypeNPN
Current-Collector(Ic)(Max)10 A
Voltage-CollectorEmitterBreakdown(Max)400 V
VceSaturation(Max)@Ib-
Ic-
Current-CollectorCutoff(Max)-
DCCurrentGain(hFE)(Min)@Ic-
Vce-
Power-MaxThrough Hole
Frequency-TransitionTO-204AA, TO-3
OperatingTemperatureTO-204AD (TO-3)
MountingType125 W
Package/Case-
SupplierDevicePackage-
Grade
Qualification
In Stock: 3238
Pricing
QTY UNIT PRICE EXT PRICE
1 93.2461
10 91.3812
100 88.5838
1000 85.7864
10000 82.0566
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
Associated Product