APT31M100B2
Part NoAPT31M100B2
ManufacturerMicrochip
DescriptionMOSFET N-CH 1000V 32A T-MAX
Datasheet
Download Now!
ECAD Module
Specification
PackageTube
SeriesPOWER MOS 8™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C32A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)380mOhm @ 16A, 10V
RdsOn(Max)@Id5V @ 2.5mA
Vgs260 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)8500 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1040W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeT-MAX™ [B2]
SupplierDevicePackageTO-247-3 Variant
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
6400
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 15.3046 | |
| 10 | 14.9985 | |
| 100 | 14.5394 | |
| 1000 | 14.0802 | |
| 10000 | 13.468 |
Associated Product
