APT9M100B
Part NoAPT9M100B
ManufacturerMicrochip
DescriptionMOSFET N-CH 1000V 9A TO247
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPOWER MOS 8™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.4Ohm @ 5A, 10V
RdsOn(Max)@Id5V @ 1mA
Vgs80 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)2605 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature335W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247 [B]
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
8637
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 3.4452 | |
| 10 | 3.3763 | |
| 100 | 3.2729 | |
| 1000 | 3.1696 | |
| 10000 | 3.0318 |
Associated Product
