APT9M100S
Part NoAPT9M100S
ManufacturerMicrochip
DescriptionMOSFET N-CH 1000V 9A D3PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesPOWER MOS 8™
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)1.4Ohm @ 5A, 10V
RdsOn(Max)@Id5V @ 1mA
Vgs±30V
Vgs(th)(Max)@Id2605 pF @ 25 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds335W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperatureD3PAK
MountingTypeTO-268-3, D³Pak (2 Leads + Tab), TO-268AA
SupplierDevicePackage80 nC @ 10 V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4530
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 7.0686 | |
| 10 | 6.9272 | |
| 100 | 6.7152 | |
| 1000 | 6.5031 | |
| 10000 | 6.2204 |
Associated Product
