APTM100H18FG
Part NoAPTM100H18FG
ManufacturerMicrochip
DescriptionMOSFET 4N-CH 1000V 43A SP6
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration4 N-Channel (Full Bridge)
FETFeature-
DraintoSourceVoltage(Vdss)1000V (1kV)
Current-ContinuousDrain(Id)@25°C43A
RdsOn(Max)@Id210mOhm @ 21.5A, 10V
Vgs5V @ 5mA
Vgs(th)(Max)@Id372nC @ 10V
GateCharge(Qg)(Max)@Vgs10400pF @ 25V
InputCapacitance(Ciss)(Max)@Vds780W
Power-Max-40°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSP6
Package/CaseSP6
SupplierDevicePackage
Grade
Qualification
In Stock:
5320
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 376.0564 | |
| 10 | 368.5353 | |
| 100 | 357.2536 | |
| 1000 | 345.9719 | |
| 10000 | 330.9296 |
Associated Product
