APTM100H45SCTG
Part NoAPTM100H45SCTG
ManufacturerMicrochip
DescriptionMOSFET 4N-CH 1000V 18A SP4
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesPOWER MOS 7®
ProductStatusActive
TechnologyMOSFET (Metal Oxide)
Configuration4 N-Channel (Full Bridge)
FETFeature-
DraintoSourceVoltage(Vdss)1000V (1kV)
Current-ContinuousDrain(Id)@25°C18A
RdsOn(Max)@Id540mOhm @ 9A, 10V
Vgs5V @ 2.5mA
Vgs(th)(Max)@Id154nC @ 10V
GateCharge(Qg)(Max)@Vgs4350pF @ 25V
InputCapacitance(Ciss)(Max)@Vds357W
Power-Max-40°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSP4
Package/CaseSP4
SupplierDevicePackage
Grade
Qualification
In Stock:
4244
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 210.349 | |
| 10 | 206.142 | |
| 100 | 199.8315 | |
| 1000 | 193.5211 | |
| 10000 | 185.1071 |
Associated Product
