APTM100UM45DAG
Part NoAPTM100UM45DAG
ManufacturerMicrochip Technology
DescriptionMOSFET N-CH 1000V 215A SP6
Datasheet
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ECAD Module
Specification
PackageBulk
SeriesPOWER MOS 7®
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1000 V
Current-ContinuousDrain(Id)@25°C215A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)52mOhm @ 107.5A, 10V
RdsOn(Max)@Id5V @ 30mA
Vgs1602 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)42700 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature5000W (Tc)
PowerDissipation(Max)-40°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSP6
SupplierDevicePackageSP6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7264
available for immediate sale in a store
available for immediate sale in a store
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 375.258 | |
| 10 | 367.7528 | |
| 100 | 356.4951 | |
| 1000 | 345.2374 | |
| 10000 | 330.227 |
Associated Product
