APTM10DAM02G
Part NoAPTM10DAM02G
ManufacturerMicrochip
DescriptionMOSFET N-CH 100V 495A SP6
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C495A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)2.5mOhm @ 200A, 10V
RdsOn(Max)@Id4V @ 10mA
Vgs1360 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)40000 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1250W (Tc)
PowerDissipation(Max)-40°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSP6
SupplierDevicePackageSP6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4768
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 228.8451 | |
| 10 | 224.2682 | |
| 100 | 217.4028 | |
| 1000 | 210.5375 | |
| 10000 | 201.3837 |
Associated Product
