LND150N3-G
Part NoLND150N3-G
ManufacturerMicrochip
DescriptionMOSFET N-CH 500V 30MA TO92-3
Datasheet
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ECAD Module
Specification
PackageBag
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)500 V
Current-ContinuousDrain(Id)@25°C30mA (Tj)
DriveVoltage(MaxRdsOn0V
MinRdsOn)1000Ohm @ 500µA, 0V
RdsOn(Max)@Id-
Vgs-
Vgs(th)(Max)@Id±20V
Vgs(Max)10 pF @ 25 V
InputCapacitance(Ciss)(Max)@VdsDepletion Mode
FETFeature740mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-92-3
SupplierDevicePackageTO-226-3, TO-92-3 (TO-226AA)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
17999
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.702 | |
| 10 | 0.688 | |
| 100 | 0.6669 | |
| 1000 | 0.6458 | |
| 10000 | 0.6178 |
Associated Product
