MS2N5116
Part NoMS2N5116
ManufacturerMicrochip
DescriptionJFET P-CH 30V TO18
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeP-Channel
Voltage-Breakdown(V(BR)GSS)30 V
DraintoSourceVoltage(Vdss)30 V
Current-Drain(Idss)@Vds(Vgs=0)5 mA @ 15 V
CurrentDrain(Id)-Max1 V @ 1 nA
Voltage-Cutoff(VGSoff)@Id27pF @ 15V
InputCapacitance(Ciss)(Max)@Vds500 mW
Power-Max-65°C ~ 200°C (TJ)
OperatingTemperature-
MountingType-
Package/CaseThrough Hole
SupplierDevicePackageTO-206AA, TO-18-3 Metal Can
Resistance-RDS(On)TO-18 (TO-206AA)
Grade175 Ohms
Qualification-
In Stock:
11607
Pricing
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Associated Product
