MSC360SMA120SDT/R
Part NoMSC360SMA120SDT/R
ManufacturerMicrochip Technology
DescriptionMOSFET SIC 1200 V 360 MOHM TO-26
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
SeriesmSiC™
Product StatusActive
FET TypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)1200 V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Drive Voltage (Max Rds On, Min Rds On)18V, 20V
Rds On (Max) @ Id, Vgs450mOhm @ 5A, 20V
Vgs(th) (Max) @ Id5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs21 nC @ 20 V
Vgs (Max)+23V, -10V
Input Capacitance (Ciss) (Max) @ Vds258 pF @ 1.2 kV
FET Feature-
Power Dissipation (Max)92W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeSurface Mount
Supplier Device PackageTO-263-7
Package / CaseTO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Grade-
Qualification-
In Stock:
2123
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 6.8 | |
| 10 | 6.664 | |
| 100 | 6.46 | |
| 1000 | 6.26 | |
| 10000 | 5.98 |
Associated Product
