MSCSM120XM50CTYZBNMG
Part NoMSCSM120XM50CTYZBNMG
ManufacturerMicrochip
DescriptionPM-MOSFET-SIC-SBD-6HPD
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
TechnologySilicon Carbide (SiC)
Configuration6 N-Channel (3-Phase Bridge)
FETFeatureSilicon Carbide (SiC)
DraintoSourceVoltage(Vdss)1200V
Current-ContinuousDrain(Id)@25°C49A (Tc), 80A (Tc)
RdsOn(Max)@Id50mOhm @ 40A, 20V, 31mOhm @ 40A, 20V
Vgs2.7V @ 2mA, 2.8V @ 3mA
Vgs(th)(Max)@Id137nC @ 20V, 232nC @ 20V
GateCharge(Qg)(Max)@Vgs1990pF @ 1000V, 3020pF @ 1000V
InputCapacitance(Ciss)(Max)@Vds196W (Tc), 315W (Tc)
Power-Max-55°C ~ 175°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeModule
Package/Case-
SupplierDevicePackage-
Grade-
Qualification
In Stock:
15332
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Associated Product
