TP0604N3-G
Part NoTP0604N3-G
ManufacturerMicrochip
DescriptionMOSFET P-CH 40V 430MA TO92-3
Datasheet
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ECAD Module
Specification
PackageBag
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)40 V
Current-ContinuousDrain(Id)@25°C430mA (Tj)
DriveVoltage(MaxRdsOn5V, 10V
MinRdsOn)2Ohm @ 1A, 10V
RdsOn(Max)@Id2.4V @ 1mA
Vgs-
Vgs(th)(Max)@Id±20V
Vgs(Max)150 pF @ 20 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature740mW (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-92-3
SupplierDevicePackageTO-226-3, TO-92-3 (TO-226AA)
Package/Case
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
5829
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.7992 | |
| 10 | 1.7632 | |
| 100 | 1.7092 | |
| 1000 | 1.6553 | |
| 10000 | 1.5833 |
Associated Product
