TP0620N3-G
Part NoTP0620N3-G
ManufacturerMicrochip
DescriptionMOSFET P-CH 200V 175MA TO92-3
Datasheet
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ECAD Module
Specification
PackageBag
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C175mA (Tj)
DriveVoltage(MaxRdsOn5V, 10V
MinRdsOn)12Ohm @ 200mA, 10V
RdsOn(Max)@Id2.4V @ 1mA
Vgs-
Vgs(th)(Max)@Id±20V
Vgs(Max)150 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1W (Ta)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-92-3
SupplierDevicePackageTO-226-3, TO-92-3 (TO-226AA)
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9980
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.824 | |
| 10 | 1.7875 | |
| 100 | 1.7328 | |
| 1000 | 1.6781 | |
| 10000 | 1.6051 |
Associated Product
