MCU09N20-TP
Part NoMCU09N20-TP
ManufacturerMicro Commercial
DescriptionInterface
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C9A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)250mOhm @ 4.5A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs11.8 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)509 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature83W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeDPAK
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3654
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.5989 | |
| 10 | 0.5869 | |
| 100 | 0.569 | |
| 1000 | 0.551 | |
| 10000 | 0.527 |
Associated Product
