MCU18N20-TP
Part NoMCU18N20-TP
ManufacturerMicro Commercial
DescriptionMOSFET N-CH ENH FET 200VDS 30VGS
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)200 V
Current-ContinuousDrain(Id)@25°C18A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)160mOhm @ 9A, 10V
RdsOn(Max)@Id3V @ 250µA
Vgs17.7 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)836 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature65.8W
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeDPAK
SupplierDevicePackageTO-252-3, DPak (2 Leads + Tab), SC-63
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3276
Pricing
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Associated Product
