MCW200N10YA-BP
RoHS

MCW200N10YA-BP

Part NoMCW200N10YA-BP
ManufacturerMicro Commercial Co
DescriptionMOSFET
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ECAD Module MCW200N10YA-BP
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Specification
PackageTape & Reel (TR)
Series-
Product StatusActive
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)100 V
Current - Continuous Drain (Id) @ 25°C200A (Tc)
Drive Voltage (Max Rds On, Min Rds On)10V
Rds On (Max) @ Id, Vgs2.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs166 nC @ 10 V
Vgs (Max)±20V
Input Capacitance (Ciss) (Max) @ Vds10051 pF @ 50 V
FET Feature-
Power Dissipation (Max)375W (Tj)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-247-3
Package / CaseTO-247-3
Grade-
Qualification-
In Stock: 2751
Pricing
QTY UNIT PRICE EXT PRICE
1 3.477
10 3.407
100 3.3
1000 3.2
10000 3.06
Shipping Information
Shiped FromShenZhen Warehourse
Lead TimeCall right now
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