SI2310AHE3-TP
Part NoSI2310AHE3-TP
ManufacturerMicro Commercial
DescriptionInterface
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C3A
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)100mOhm @ 3A, 10V
RdsOn(Max)@Id2V @ 250µA
Vgs10.27 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)409 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.2W
PowerDissipation(Max)-55°C ~ 150°C
OperatingTemperatureSurface Mount
MountingTypeSOT-23
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock:
4950
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.0944 | |
| 10 | 0.0925 | |
| 100 | 0.0897 | |
| 1000 | 0.0868 | |
| 10000 | 0.0831 |
Associated Product
