SI2312HE3-TP
Part NoSI2312HE3-TP
ManufacturerMicro Commercial
DescriptionInterface
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C5A
DriveVoltage(MaxRdsOn1.8V, 4.5V
MinRdsOn)31.8mOhm 5A, 4.5V
RdsOn(Max)@Id1V @ 250µA
Vgs-
Vgs(th)(Max)@Id±8V
Vgs(Max)865 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature350mW
PowerDissipation(Max)-55°C ~ 150°C
OperatingTemperatureAutomotive
MountingTypeAEC-Q101
SupplierDevicePackageSurface Mount
Package/CaseSOT-23
GateCharge(Qg)(Max)@VgsTO-236-3, SC-59, SOT-23-3
Grade
Qualification
In Stock:
23621
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.0828 | |
| 10 | 0.0811 | |
| 100 | 0.0787 | |
| 1000 | 0.0762 | |
| 10000 | 0.0729 |
Associated Product
