SI5618A-TP
Part NoSI5618A-TP
ManufacturerMicro Commercial
DescriptionInterface
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)60 V
Current-ContinuousDrain(Id)@25°C1.6A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)160mOhm @ 1.5A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs12 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)380 pF @ 30 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature1.5W
PowerDissipation(Max)-55°C ~ 150°C
OperatingTemperature-
MountingType-
SupplierDevicePackageSurface Mount
Package/CaseSOT-23
GateCharge(Qg)(Max)@VgsTO-236-3, SC-59, SOT-23-3
Grade
Qualification
In Stock:
3571
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.392 | |
| 10 | 0.3842 | |
| 100 | 0.3724 | |
| 1000 | 0.3606 | |
| 10000 | 0.345 |
Associated Product
