SICW080N120Y4-BP
Part NoSICW080N120Y4-BP
ManufacturerMicro Commercial
DescriptionN-CHANNEL MOSFET,TO-247-4
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C39A
DriveVoltage(MaxRdsOn18V
MinRdsOn)85mOhm @ 20A, 18V
RdsOn(Max)@Id3.6V @ 5mA
Vgs41 nC @ 18 V
Vgs(th)(Max)@Id890 pF @ 1000 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds223W (Tc)
FETFeature-55°C ~ 175°C (TJ)
PowerDissipation(Max)-
OperatingTemperature-
MountingTypeThrough Hole
SupplierDevicePackageTO-247-4
Package/CaseTO-247-4
GateCharge(Qg)(Max)@Vgs+22V, -8V
Grade
Qualification
In Stock:
7205
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 19.5644 | |
| 10 | 19.1731 | |
| 100 | 18.5862 | |
| 1000 | 17.9992 | |
| 10000 | 17.2167 |
Associated Product
