SICW1000N170A-BP
Part NoSICW1000N170A-BP
ManufacturerMicro Commercial
DescriptionN-CHANNEL MOSFET,TO-247AB
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologySiC (Silicon Carbide Junction Transistor)
DraintoSourceVoltage(Vdss)1700 V
Current-ContinuousDrain(Id)@25°C3A
DriveVoltage(MaxRdsOn15V, 20V
MinRdsOn)1.32Ohm @ 1.5A, 20V
RdsOn(Max)@Id4.5V @ 1mA
Vgs15.5 nC @ 20 V
Vgs(th)(Max)@Id+25V, -5V
Vgs(Max)124 pF @ 1000 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature69W
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-247AB
SupplierDevicePackageTO-247-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
11577
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 10.3896 | |
| 10 | 10.1818 | |
| 100 | 9.8701 | |
| 1000 | 9.5584 | |
| 10000 | 9.1428 |
Associated Product
