APTM120U10DAG
Part NoAPTM120U10DAG
ManufacturerMicrosemi
DescriptionMOSFET N-CH 1200V 160A SP6
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)1200 V
Current-ContinuousDrain(Id)@25°C160A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)120mOhm @ 58A, 10V
RdsOn(Max)@Id5V @ 20mA
Vgs1100 nC @ 10 V
Vgs(th)(Max)@Id±30V
Vgs(Max)28900 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature3290W (Tc)
PowerDissipation(Max)-40°C ~ 150°C (TJ)
OperatingTemperatureChassis Mount
MountingTypeSP6
SupplierDevicePackageSP6
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2841
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Associated Product
