JAN2N6849U
Part NoJAN2N6849U
ManufacturerMicrosemi
DescriptionMOSFET P-CH 100V 6.5A 18ULCC
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusObsolete
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C6.5A (Tc)
DriveVoltage(MaxRdsOn10V
MinRdsOn)320mOhm @ 6.5A, 10V
RdsOn(Max)@Id4V @ 250µA
Vgs34.8 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds800mW (Ta), 25W (Tc)
FETFeature-55°C ~ 150°C (TJ)
PowerDissipation(Max)Military
OperatingTemperatureMIL-PRF-19500/564
MountingTypeSurface Mount
SupplierDevicePackage18-ULCC (9.14x7.49)
Package/Case18-CLCC
GateCharge(Qg)(Max)@Vgs
Grade
Qualification
In Stock:
15193
Pricing
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Associated Product
