NTE464
Part NoNTE464
ManufacturerNTE Electronics
DescriptionMOSFET-P CHANNEL AMP/SW
Datasheet
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ECAD Module
Specification
PackageBag
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)25 V
Current-ContinuousDrain(Id)@25°C10A
DriveVoltage(MaxRdsOn10V
MinRdsOn)600Ohm @ 0A, 10V
RdsOn(Max)@Id5V @ 10A
Vgs-
Vgs(th)(Max)@Id±30V
Vgs(Max)5000 pF @ 10 V
InputCapacitance(Ciss)(Max)@VdsStandard
FETFeature800mW (Tc)
PowerDissipation(Max)175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeTO-72
SupplierDevicePackageTO-72-3
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
25195
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 20.6944 | |
| 10 | 20.2805 | |
| 100 | 19.6597 | |
| 1000 | 19.0388 | |
| 10000 | 18.2111 |
Associated Product
