PSMN8R5-100ESFQ
Part NoPSMN8R5-100ESFQ
ManufacturerNXP Semiconductors
DescriptionNEXPERIA PSMN8R5 - NEXTPOWER 100
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C97A (Ta)
DriveVoltage(MaxRdsOn7V, 10V
MinRdsOn)8.8mOhm @ 25A, 10V
RdsOn(Max)@Id4V @ 1mA
Vgs44.5 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)3181 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature183W (Ta)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI2PAK
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
9428
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | Get latest price! | - |
| 10 | Get latest price! | - |
| 100 | Get latest price! | - |
| 1000 | Get latest price! | - |
| 10000 | Get latest price! | - |
Associated Product
