BUK652R1-30C,127
Part NoBUK652R1-30C,127
ManufacturerNXP USA Inc.
DescriptionMOSFET N-CH 30V 120A TO220AB
Datasheet
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ECAD Module
Specification
PackageTube
SeriesTrenchMOS™
Product StatusObsolete
FET TypeN-Channel
TechnologyMOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)30 V
Current - Continuous Drain (Id) @ 25°C120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Rds On (Max) @ Id, Vgs2.4mOhm @ 25A, 10V
Vgs(th) (Max) @ Id2.8V @ 1mA
Gate Charge (Qg) (Max) @ Vgs168 nC @ 10 V
Vgs (Max)±16V
Input Capacitance (Ciss) (Max) @ Vds10918 pF @ 25 V
FET Feature-
Power Dissipation (Max)263W (Tc)
Operating Temperature-55°C ~ 175°C (TJ)
Mounting TypeThrough Hole
Supplier Device PackageTO-220AB
Package / CaseTO-220-3
Grade-
Qualification-
In Stock:
5004
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 1.04 | |
| 10 | 1.019 | |
| 100 | 0.99 | |
| 1000 | 0.96 | |
| 10000 | 0.92 |
Associated Product
