BUK9E6R1-100E,127
Part NoBUK9E6R1-100E,127
ManufacturerNXP Semiconductors
DescriptionMOSFET N-CH 100V 120A I2PAK
Datasheet
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ECAD Module
Specification
PackageTube
SeriesTrenchMOS™
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C120A (Tc)
DriveVoltage(MaxRdsOn5V, 10V
MinRdsOn)5.9mOhm @ 25A, 10V
RdsOn(Max)@Id2.1V @ 1mA
Vgs133 nC @ 5 V
Vgs(th)(Max)@Id±10V
Vgs(Max)17460 pF @ 25 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature349W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI2PAK
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
2565
Pricing
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Associated Product
