PMT200EN,115
Part NoPMT200EN,115
ManufacturerNXP Semiconductors
DescriptionMOSFET N-CH 100V 1.8A SOT223
Datasheet
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Specification
PackageTape & Reel (TR)
Series-
ProductStatusObsolete
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C1.8A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)235mOhm @ 1.5A, 10V
RdsOn(Max)@Id2.5V @ 250µA
Vgs10 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)475 pF @ 80 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature800mW (Ta), 8.3W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeSC-73
SupplierDevicePackageTO-261-4, TO-261AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
3269
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