PMV65XPEA215
Part NoPMV65XPEA215
ManufacturerNXP Semiconductors
DescriptionP-CHANNEL MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeP-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)20 V
Current-ContinuousDrain(Id)@25°C2.8A (Ta)
DriveVoltage(MaxRdsOn2.5V, 4.5V
MinRdsOn)78mOhm @ 2.8A, 4.5V
RdsOn(Max)@Id1.25V @ 250µA
Vgs9 nC @ 4.5 V
Vgs(th)(Max)@Id±12V
Vgs(Max)618 pF @ 10 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature480mW (Ta), 6.25W (Tc)
PowerDissipation(Max)-55°C ~ 150°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeTO-236AB
SupplierDevicePackageTO-236-3, SC-59, SOT-23-3
Package/CaseAutomotive
GateCharge(Qg)(Max)@VgsAEC-Q101
Grade
Qualification
In Stock:
2660
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.095 | |
| 10 | 0.0931 | |
| 100 | 0.0902 | |
| 1000 | 0.0874 | |
| 10000 | 0.0836 |
Associated Product
