PSMN6R0-25YLD115
Part NoPSMN6R0-25YLD115
ManufacturerNXP Semiconductors
DescriptionN-CHANNEL POWER MOSFET
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)25 V
Current-ContinuousDrain(Id)@25°C61A (Ta)
DriveVoltage(MaxRdsOn4.5V, 10V
MinRdsOn)6.75mOhm @ 15A, 10V
RdsOn(Max)@Id2.2V @ 1mA
Vgs10.5 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)705 pF @ 12 V
InputCapacitance(Ciss)(Max)@VdsSchottky Diode (Body)
FETFeature43W (Ta)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureSurface Mount
MountingTypeLFPAK56, Power-SO8
SupplierDevicePackageSC-100, SOT-669
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
4184
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 0.1827 | |
| 10 | 0.179 | |
| 100 | 0.1736 | |
| 1000 | 0.1681 | |
| 10000 | 0.1608 |
Associated Product
