PSMN8R5-100ESQ
Part NoPSMN8R5-100ESQ
ManufacturerNXP Semiconductors
DescriptionPOWER FIELD-EFFECT TRANSISTOR, 1
Datasheet
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ECAD Module
Specification
PackageBulk
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyMOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C100A (Tj)
DriveVoltage(MaxRdsOn10V
MinRdsOn)8.5mOhm @ 25A, 10V
RdsOn(Max)@Id4V @ 1mA
Vgs111 nC @ 10 V
Vgs(th)(Max)@Id±20V
Vgs(Max)5512 pF @ 50 V
InputCapacitance(Ciss)(Max)@Vds-
FETFeature263W (Tc)
PowerDissipation(Max)-55°C ~ 175°C (TJ)
OperatingTemperatureThrough Hole
MountingTypeI2PAK
SupplierDevicePackageTO-262-3 Long Leads, I2PAK, TO-262AA
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
7000
Pricing
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|---|---|---|
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Associated Product
