GAN3R2-100CBEAZ
Part NoGAN3R2-100CBEAZ
ManufacturerNexperia
Description100 V, 3.2 MOHM GALLIUM NITRIDE
Datasheet
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ECAD Module
Specification
PackageTape & Reel (TR),Cut Tape (CT),Digi-Reel®
Series-
ProductStatusActive
FETTypeN-Channel
TechnologyGaNFET (Gallium Nitride)
DraintoSourceVoltage(Vdss)100 V
Current-ContinuousDrain(Id)@25°C60A
DriveVoltage(MaxRdsOn3.2mOhm @ 25A, 5V
MinRdsOn)2.5V @ 9mA
RdsOn(Max)@Id12 nC @ 5 V
Vgs+6V, -4V
Vgs(th)(Max)@Id1000 pF @ 50 V
Vgs(Max)-
InputCapacitance(Ciss)(Max)@Vds394W
FETFeature-40°C ~ 150°C (TJ)
PowerDissipation(Max)Surface Mount
OperatingTemperature8-WLCSP (3.5x2.13)
MountingType8-XFBGA, WLCSP
SupplierDevicePackage5V
Package/Case-
GateCharge(Qg)(Max)@Vgs-
Grade
Qualification
In Stock:
16163
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.65 | |
| 10 | 4.557 | |
| 100 | 4.4175 | |
| 1000 | 4.278 | |
| 10000 | 4.092 |
Associated Product
