Specification
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)200mW
Collector Current (Ic)100mA
DC Current Gain (hFE@Ic,Vce)210@2mA,10V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)250mV@100mA,10mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)
In Stock:
8221
Pricing
| QTY | UNIT PRICE | EXT PRICE |
|---|---|---|
| 1 | 4.0 | |
| 10 | 3.92 | |
| 100 | 3.8 | |
| 1000 | 3.68 | |
| 10000 | 3.52 |
Associated Product
