Specification
Collector-Emitter Breakdown Voltage (Vceo)140V
Power Dissipation (Pd)650mW
Collector Current (Ic)4A
DC Current Gain (hFE@Ic,Vce)50@4A,5V
Transition Frequency (fT)-
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)420mV@4A,400mA
Transistor TypePNP
Operating Temperature+150u2103@(Tj)
In Stock:
2224
Pricing
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Associated Product