NX2301P
Part NoNX2301P
ManufacturerNexperia
DescriptionSmall Signal Field-Effect Transistor, 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Datasheet
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ECAD Module
Specification
RoHSCompliant
MountSurface Mount
Width1.4 mm
Height1 mm
Length3 mm
PackagingCut Tape
REACH SVHCNo SVHC
Case/PackageSOT-23
Number of Pins3
Input Capacitance380 pF
Power Dissipation400 mW
Threshold Voltage-750 mV
Number of Channels1
Turn-On Delay Time7 ns
Turn-Off Delay Time50 ns
Element ConfigurationSingle
Max Power Dissipation400 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Drain to Source Resistance100 mΩ
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)-2 A
Max Junction Temperature (Tj)150 °C
Ambient Temperature Range High150 °C
Drain to Source Voltage (Vdss)-20 V
Drain to Source Breakdown Voltage-20 V
In Stock:
43340
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