Specification
Collector-Emitter Breakdown Voltage (Vceo)50V
Power Dissipation (Pd)750mW
Collector Current (Ic)3A
DC Current Gain (hFE@Ic,Vce)100@2A,2V
Transition Frequency (fT)100MHz
Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib)290mV@2A,200mA
Transistor TypeNPN
Operating Temperature+150u2103@(Tj)
In Stock:
23271
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.112 | |
10 | 0.109 | |
100 | 0.11 | |
1000 | 0.1 | |
10000 | 0.1 |