![PMCXB900UEZ](/media/Discrete%20Semiconductor%20Products/Transistors/DFN1010B-6.jpg)
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PMCXB900UEZ
Part NoPMCXB900UEZ
ManufacturerNexperia
DescriptionPMCXB900UE - 20 V, complementary N/P-channel Trench MOSFET
Datasheet
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Specification
RoHSCompliant
PackagingTape & Reel (TR)
Rds On Max620 mΩ
Case/PackageSOT
Number of Pins6
Lifecycle StatusProduction (Last Updated: 1 day ago)
Input Capacitance21.3 pF
Radiation HardeningNo
Max Power Dissipation265 mW
Max Operating Temperature150 °C
Min Operating Temperature-55 °C
Gate to Source Voltage (Vgs)8 V
Continuous Drain Current (ID)500 mA
Manufacturer Lifecycle StatusRELEASED FOR SUPPLY (Last Updated: 1 day ago)
Drain to Source Voltage (Vdss)20 V
In Stock:
15071
available for immediate sale in a store
available for immediate sale in a store
Pricing
QTY | UNIT PRICE | EXT PRICE |
---|---|---|
1 | 0.3762 | |
10 | 0.3687 | |
100 | 0.3574 | |
1000 | 0.3461 | |
10000 | 0.3311 |
Associated Product
![UMT2907AT106](/media/Discrete%20Semiconductor%20Products/Transistors/846%25253BUMT3%25253BUM%25252CUA%25252CWT%25253B3.jpg)
UMT2907AT106
ROHM
TRANSISTOR,PNP,60V,0.6A,SOT-323; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Typ Gain Bandwidth ft:200MHz; Power Dissipation Pd
ROHM
TRANSISTOR,PNP,60V,0.6A,SOT-323; Transistor Polarity:PNP; Collector Emitter Voltage V(br)ceo:-60V; Typ Gain Bandwidth ft:200MHz; Power Dissipation Pd